View MRFE6S9200HR3_5060490.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Freescale Semiconductor Technical Data
Document Number: MRFE6S9200H Rev. 1, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., f = 880 MHz, 3GPP Test Model 1, 64 DPCH with 45.2% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 21 dB Drain Efficiency -- 35% Device Output Signal PAR -- 6.36 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 40 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 300 W CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness. Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRFE6S9200HR3 MRFE6S9200HSR3
880 MHz, 58 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465B - 03, STYLE 1 NI - 880 MRFE6S9200HR3
CASE 465C - 02, STYLE 1 NI - 880S MRFE6S9200HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDSS VGS Tstg TC TJ
Value - 0.5, +66 - 0.5, +12 - 65 to +150 150 225
Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 200 W CW Case Temperature 79C, 58 W CW Symbol RJC Value (2,3) 0.29 0.33 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
MRFE6S9200HR3 MRFE6S9200HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 600 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 4.1 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 2.41 74.61 557.27 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1.2 2 0.1 2 2.7 0.2 2.7 3.8 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 10 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg. W - CDMA, f = 880 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 20 33 6 -- -- 21 35 6.36 - 40 - 15 23 -- -- - 36.5 -9 dB % dB dBc dB MHz
Typical Performances (In Freescale Test Fixture, 50 hm system) VDD = 28 Vdc, IDQ = 1400 mA, 865 - 900 MHz Bandwidth Video Bandwidth @ 200 W PEP Pout where IM3 = - 30 dBc VBW (Tone Spacing from 100 kHz to VBW) -- 10 -- IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 35 MHz Bandwidth @ Pout = 58 W Avg. Average Deviation from Linear Phase in 35 MHz Bandwidth @ Pout = 200 W CW Average Group Delay @ Pout = 200 W CW, f = 880 MHz Part - to - Part Insertion Phase Variation @ Pout = 200 W CW, f = 880 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) 1. Part is internally matched on input. GF Delay G P1dB -- -- -- -- -- -- 0.5 0.28 3.72 15.9 0.016 0.008 -- -- -- -- -- --
dB ns dB/C dBm/C
MRFE6S9200HR3 MRFE6S9200HSR3 2 RF Device Data Freescale Semiconductor
B1 VBIAS C30 + C26 R3
Z11 Z13 C2 R2 Z15 C11 Z16 Z17
+ C4
+
VSUPPLY
C22 C23 C32 C28 C34
C12 Z18
C14 Z19
C16 Z20
C18 Z21 Z22 Z23 Z24 C6
RF OUTPUT Z25
RF INPUT
C9 Z1 C1 C20 C7 C8 R1 B2 + C31 C27 R4 C3 Z9 Z10 Z11, Z12 Z13, Z14 Z15 Z16 Z17 Z18 0.119 x 0.118 Microstrip 0.305 x 0.980 Microstrip 2.134 x 0.070 Microstrip 1.885 x 0.100 Microstrip 0.100 x 1.090 Microstrip 0.212 x 1.090 Microstrip 0.083 x 0.962 x 1.036 Taper 0.074 x 0.816 x 0.888 Taper Z19 Z20 Z21 Z22 Z23 Z24 Z25 PCB 0.074 x 0.669 x 0.707 Taper 0.074 x 0.524 x 0.595 Taper 0.058 x 0.474 x 0.488 Taper 0.326 x 0.491 Microstrip 0.708 x 0.220 Microstrip 0.555 x 0.080 Microstrip 0.356 x 0.080 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55 Z12 C5 + C25 C24 C33 C29 DUT Z14 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C10 C13 C15 C17 C19 C21
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
0.351 0.538 0.424 0.052 0.414 0.052 0.140 0.244
x 0.080 x 0.080 x 0.080 x 0.220 x 0.220 x 0.491 x 0.491 x 0.736
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip x 0.980 Taper
Figure 1. MRFE6S9200HR3(SR3) Test Circuit Schematic
Table 5. MRFE6S9200HR3(SR3) Test Circuit Component Designations and Values
Part B1, B2 C1, C2, C3, C4, C5, C6 C7 C8, C9, C18, C19 C10, C11 C12, C13 C14, C15, C16, C17 C20 C21 C22, C23, C24, C25 C26, C27 C28, C29 C30, C31, C32, C33 C34 R1, R2, R3, R4 Description Small Ferrite Beads, Surface Mount 47 pF Chip Capacitors 2.7 pF Chip Capacitor 1.3 pF Chip Capacitors 12 pF Chip Capacitors 4.3 pF Chip Capacitors 3.3 pF Chip Capacitors 0.6 - 4.5 pF Variable Capacitor, Gigatrim 0.8 - 8.0 pF Variable Capacitor, Gigatrim 10 F, 50 V Chip Capacitors 10 F, 35 V Tantalum Chip Capacitors 22 F, 35 V Tantalum Chip Capacitors 0.1 F Chip Capacitors 330 F, 63 V Electrolytic Capacitor 10 , 1/4 W Chip Resistors Part Number 2743019447 ATC100B470JT500XT ATC100B2R7JT500XT ATC100B1R3JT500XT ATC100B120JT500XT ATC100B4R3JT500XT ATC100B3R3JT500XT 27271SL 27291SL GRM55DR61H106KA88B T491C106K035AT T491C226K035AT CDR33Bx104AKYS EKMG630ELL331MJ205 CRCW120610R0FKEA Manufacturer Fair Rite ATC ATC ATC ATC ATC ATC Johanson Johanson Murata Kemet Kemet Kemet United Chemi - Con Vishay
MRFE6S9200HR3 MRFE6S9200HSR3 RF Device Data Freescale Semiconductor 3
C2 C26 B1 R3 C30 900 MHz NI-880 Rev. 3
C4
C22 C23 C28
C32 C34 R2 C9 CUT OUT AREA C8 C1 C20 C7 R1 C11 C16 C18 C12 C14 C13 C15 C17 C19 C10 C33 C21 C6
B2
C31
C24 C25
C29
C27 C3 C5
Figure 2. MRFE6S9200HR3(SR3) Test Circuit Component Layout
MRFE6S9200HR3 MRFE6S9200HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
23 22 21 Gps, POWER GAIN (dB) 20 19 18 17 16 15 800 IRL 820 840 860 880 900 920 VDD = 28 Vdc, Pout = 58 W (Avg.) IDQ = 1400 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth PAR = 7.5 dB @ 0.01% Probability (CCDF) D Gps 38 34 30 26 -0.3 PARC (dBc) -0.6 -0.9 -1.2 PARC 940 -1.5 960 D, DRAIN EFFICIENCY (%)
0 -4 -9 -12 -16
f, FREQUENCY (MHz)
Figure 3. Single - Carrier W - CDMA Broadband Performance @ Pout = 58 Watts Avg.
22 21 20 Gps, POWER GAIN (dB) 19 18 17 16 IRL 15 14 800 PARC 820 840 860 880 900 920 940 -2.8 -3 960 Gps VDD = 28 Vdc, Pout = 99 W (Avg.) IDQ = 1400 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth PAR = 7.5 dB @ 0.01% Probability (CCDF) D 51 45 39 33 -2.2 PARC (dBc) -2.4 -2.6 D, DRAIN EFFICIENCY (%)
-3 -6 -9 -12 -15
f, FREQUENCY (MHz)
Figure 4. Single - Carrier W - CDMA Broadband Performance @ Pout = 99 Watts Avg.
23 22 Gps, POWER GAIN (dB) IDQ = 2100 mA 1750 mA 1400 mA 1050 mA VDD = 28 Vdc f1 = 875 MHz, f2 = 885 MHz Two-Tone Measurements 10 100 600 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 0 -10 -20 1400 mA -30 -40 -50 -60 1 1 10 100 600 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP 1750 mA 2100 mA 1050 mA VDD = 28 Vdc f1 = 875 MHz, f2 = 885 MHz Two-Tone Measurements IDQ = 700 mA
21 20 19 18 17
700 mA
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRFE6S9200HR3 MRFE6S9200HSR3 RF Device Data Freescale Semiconductor 5
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
-20 -30 -40 -50 -60 -70 1
VDD = 28 Vdc, IDQ = 1400 mA f1 = 875 MHz, f2 = 885 MHz Two-Tone Measurements
IMD, INTERMODULATION DISTORTION (dBc)
-10
-10 -20 IM3-U -30 -40 -50 -60 -70 1 IM7-U IM7-L VDD = 28 Vdc, Pout = 240 W (PEP), IDQ = 1400 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz 10 TWO-TONE SPACING (MHz) 100 IM5-U IM5-L IM3-L
3rd Order 5th Order 7th Order
10
100
600
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products versus Output Power
1 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON THE CCDF (dB) 0 -1 -2 -3 -1 dB = 59.7 W -2 dB = 82.5 W
Figure 8. Intermodulation Distortion Products versus Tone Spacing
60 Ideal D, DRAIN EFFICIENCY (%) 55 50 45 40 -3 dB = 115 W Actual 35 30 120
-4 -5 50
VDD = 28 Vdc, IDQ = 1400 mA f = 880 MHz, Input PAR = 7.5 dB 60 70 80 90 100 110
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
ACPR, UPPER AND LOWER RESULTS (dBc) -30 24 23 Gps, POWER GAIN (dB) 22 21 20 19 18 17 -70 38 16 39 40 41 42 43 44 45 46 47 48 49 0.1 1 10 100 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) CW D VDD = 28 Vdc IDQ = 1400 mA f = 880 MHz 85_C Gps TC = -30_C 25_C -30_C 25_C 60 85_C 50 40 30 20 10 0 600 80 70 D, DRAIN EFFICIENCY (%)
VDD = 28 Vdc, IDQ = 1400 mA, f = 880 MHz Single-Carrier W-CDMA, PAR = 7.5 dB, ACPR @ 5 MHz Offset in 3.84 MHz Integrated Bandwidth Uncorrected, Upper and Lower
-40
-50 DPD Corrected No Memory Correction DPD Corrected, with Memory Correction
-60
Figure 10. Digital Predistortion Correction versus ACPR and Output Power
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
MRFE6S9200HR3 MRFE6S9200HSR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
22 IDQ = 1400 mA f = 880 MHz 21 Gps, POWER GAIN (dB) MTTF (HOURS) 28 V VDD = 24 V 17 0 100 200 300 400 Pout, OUTPUT POWER (WATTS) CW 32 V 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 58 W Avg., and D = 35%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 108 109
20
107
19
18
106
Figure 12. Power Gain versus Output Power
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 -30 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 -50 -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -40 -10 -20 3.84 MHz Channel BW
PEAK-TO-AVERAGE (dB)
Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
Figure 15. Single - Carrier W - CDMA Spectrum
MRFE6S9200HR3 MRFE6S9200HSR3 RF Device Data Freescale Semiconductor 7
f = 960 MHz
Zload f = 800 MHz
Zo = 5
Zsource
f = 960 MHz
f = 800 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg. f MHz 800 820 840 860 880 900 920 940 960 Zsource W 4.23 - j4.85 4.46 - j4.69 4.39 - j4.75 4.06 - j4.68 3.70 - j4.45 3.55 - j4.04 3.57 - j3.71 3.67 - j3.47 3.67 - j3.45 Zload W 0.70 - j0.33 0.76 - j0.13 0.78 - j0.02 0.79 + j0.09 0.81 + j0.16 0.86 + j0.21 0.89 + j0.27 0.89 + j0.31 0.82 + j0.33
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance MRFE6S9200HR3 MRFE6S9200HSR3 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M
(FLANGE) 3
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B M
M (INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA
M
B S
N
M M M
(LID)
aaa C
M
TA
M
B
DIM A B C D E F G H K M N Q R S aaa bbb ccc
F E A
(FLANGE)
T A
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465B - 03 ISSUE D NI - 880 MRFE6S9200HR3
B
1
(FLANGE)
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B M
M
(INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA TA
M
B S B
N
M M M
(LID)
aaa
M
M
DIM A B C D E F H K M N R S aaa bbb ccc
C F E A
(FLANGE)
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
T A
SEATING PLANE
CASE 465C - 02 ISSUE D NI - 880S MRFE6S9200HSR3
MRFE6S9200HR3 MRFE6S9200HSR3 RF Device Data Freescale Semiconductor 9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Mar. 2007 Dec. 2008 * Initial Release of Data Sheet * Updated Full Frequency Band in Typical Performance bullet to f = 880 MHz to match actual production test, p. 1 * Clarified 3 dB overdrive test condition for HV6E enhanced ruggedness parts, p. 1 * Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, Dynamic Characteristics table, p. 2 * Changed maximum adjacent channel power ratio specification from - 38.5 dBc to - 36.5 dBc to match actual production test limits, p. 2 * Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3 * Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 * Deleted output signal data from Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal, p. 7 Description
MRFE6S9200HR3 MRFE6S9200HSR3 10 RF Device Data Freescale Semiconductor
How to Reach Us:
Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 Fax: +1 - 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2007-2008. All rights reserved.
MRFE6S9200HR3 MRFE6S9200HSR3
Document Number: RF Device Data MRFE6S9200H Rev. 1, 12/2008 Freescale Semiconductor
11

▲Up To Search▲

Price & Availability of MRFE6S9200HR3

	To Download MRFE6S9200HR3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .